* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source Vol
MRF8S26060HR3 Datasheet (252.83 KB)
MRF8S26060HR3
Motorola Semiconductor
252.83 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF8S26060H www.DataSheet4U.com Rev. 0, 4/2010
RF Power Field Effect Transistors
N-Channel E.
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