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MRF8S26060HR3 Datasheet - Motorola Semiconductor

MRF8S26060HR3 - RF Power Field Effect Transistors

Part Number MPZ2012S300AT000 ATC100B5R6CT500XT ATC100B0R3BT500XT C5750X7R1H106KT C5750JF1H226ZT T491X226K035AT C3225X7R2A684KT MCGPR63V227M10X21 C2012X7R2102KT CRCW120612R0FKEA CuClad 25064-0300-55-22 TDK ATC ATC TDK TDK Kemet TDK Multicomp TDK Vishay Arlon Manufacturer MRF8S26060HR3 MRF8S26060HSR3

Freescale Semiconductor Technical Data Document Number: MRF8S26060H www.DataSheet4U.com Rev.

0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Ch

MRF8S26060HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Vol

MRF8S26060HR3_MotorolaSemiconductor.pdf

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Datasheet Details

Part number:

MRF8S26060HR3

Manufacturer:

Motorola Semiconductor

File Size:

252.83 KB

Description:

Rf power field effect transistors.

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