MRF8S21200HSR6, MRF8S21200HR6 Datasheet - Freescale Semiconductor

MRF8S21200HSR6 RF Power Field Effect Transistors

8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 0.6 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 0.5 pF Chip Capacitor 0.8 pF Chip Capacitor 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 22 Ω, 1/4 W Chip Resistor 12 Ω, 1/4 W Chip Resistors 0 Ω, 3 A Chip Resistors 0.030″, εr = 3.5 Part Numb.

Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 48 Watts Avg., IQ Magnitude Clipping, Channel B.

MRF8S21200HSR6 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Sour

MRF8S21200HR6_FreescaleSemiconductor.pdf