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MRF8S21200HSR6, MRF8S21200HR6 Datasheet - Freescale Semiconductor

MRF8S21200HSR6 - RF Power Field Effect Transistors

8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 0.6 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 0.5 pF Chip Capacitor 0.8 pF Chip Capacitor 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 22 Ω, 1/4 W Chip Resistor 12 Ω, 1/4 W Chip Resistors 0 Ω, 3 A Chip Resistors 0.030″, εr = 3.5 Part Numb

Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev.

1, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 48 Watts Avg., IQ Magnitude Clipping, Channel B

MRF8S21200HSR6 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Sour

MRF8S21200HR6_FreescaleSemiconductor.pdf

This datasheet PDF includes multiple part numbers: MRF8S21200HSR6, MRF8S21200HR6. Please refer to the document for exact specifications by model.
MRF8S21200HSR6 Datasheet Preview Page 2 MRF8S21200HSR6 Datasheet Preview Page 3

Datasheet Details

Part number:

MRF8S21200HSR6, MRF8S21200HR6

Manufacturer:

Freescale Semiconductor

File Size:

345.17 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF8S21200HSR6, MRF8S21200HR6.
Please refer to the document for exact specifications by model.

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