Description
Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev.1, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mod.
8.
Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Sour
Applications
* with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 48 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Inp
