MRF8S26060HSR3, MRF8S26060HR3 Datasheet - Motorola Semiconductor

MRF8S26060HSR3, MRF8S26060HR3, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF8S26060H www.DataSheet4U.com Rev.0, 4/2010 RF Power Field Effect Transistors N-Channel E.
Part Number MPZ2012S300AT000 ATC100B5R6CT500XT ATC100B0R3BT500XT C5750X7R1H106KT C5750JF1H226ZT T491X226K035AT C3225X7R2A684KT MCGPR63V227M10X21 C2012.

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MRF8S26060HR3_MotorolaSemiconductor.pdf

MRF8S26060HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF8S26060HSR3, MRF8S26060HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF8S26060HSR3, MRF8S26060HR3

Manufacturer:

Motorola Semiconductor

File Size:

252.83 KB

Description:

RF Power Field Effect Transistors

Note:

This datasheet PDF includes multiple part numbers: MRF8S26060HSR3, MRF8S26060HR3.
Please refer to the document for exact specifications by model.

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source Vol

Applications

* with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.5 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Si

MRF8S26060HSR3 Distributors

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MRF8S26060HR3 Power Field Effect Transistors Motorola Semiconductor

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