Part number: MRF8S26060HSR3
Manufacturer: Motorola Semiconductor
File Size: 252.83KB
Download: 📄 Datasheet
Description: RF Power Field Effect Transistors
The MRF8S26060HSR3 is a high-frequency SiC RF power transistor module designed and manufactured by Motorola Semiconductor for use in high-power amplifier applications. It features a rugged design capable of operating in harsh environments with high efficiency and reliability. This transistor module offers high power output and is suitable for a wide range of RF power applications, including industrial, scientific, and medical fields..
Part Number MPZ2012S300AT000 ATC100B5R6CT500XT ATC100B0R3BT500XT C5750X7R1H106KT C5750JF1H226ZT T491X226K035AT C3225X7R2A684KT MCGPR63V227M10X21 C2012X7R2102KT CRCW120612R0FKEA CuClad 25064-0300-55-22 TDK ATC ATC TDK TDK Kemet TDK Multicomp TDK Visha.
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters <.
with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulati.
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