MRF8S18120HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF8S18120HR3, RF Power Field Effect Transistors

12 pF Chip Capacitors 9.1 pF Chip Capacitors 10 nF Chip Capacitor 8.2 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitors 47 μF, 16 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 10 Ω, 1/4 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55 Part Number ATC

Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev.

0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.2 18.6 18.

MRF8S18120HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Class C Operation

* Optimiz