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MRF8S18120HR3 Datasheet - Freescale Semiconductor

MRF8S18120HR3 RF Power Field Effect Transistors

12 pF Chip Capacitors 9.1 pF Chip Capacitors 10 nF Chip Capacitor 8.2 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitors 47 μF, 16 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 10 Ω, 1/4 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55 Part Number ATC.
Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.2 18.6 18..

MRF8S18120HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Class C Operation

* Optimiz

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Datasheet Details

Part number:

MRF8S18120HR3

Manufacturer:

Freescale Semiconductor

File Size:

323.53 KB

Description:

Rf power field effect transistors.

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MRF8S18120HR3 MRF8S18120HR3 Power Field Effect Transistors Freescale Semiconductor

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