MRF8S18120HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev.0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
12 pF Chip Capacitors 9.

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Datasheet Specifications

Part number: MRF8S18120HR3
Manufacturer: Freescale Semiconductor
File Size: 323.53 KB
Datasheet: MRF8S18120HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* Optimiz

Applications

* with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.2 18.6 18.7 hD (%) 49.8 51.4 53.9

MRF8S18120HR3 Distributors

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MRF8S18120HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF8S18120HR3-like datasheet