MRF8S7120NR3 Datasheet (Motorola) - RF Power Field Effect Transistor

MRF8S7120NR3, RF Power Field Effect Transistor

Part Number MPZ2012S300AT000 ATC100B2R7BT500XT ATC100B101JT500XT ATC100B8R2CT500XT 476KXM050M ATC100B120JT500XT ATC100B5R6CT500XT ATC100B1R2BT500XT ATC100B390JT500XT C5750X7R1H106KT MCGPR63V477M13X26 *RH ATC100B1R0BT500XT C4532X7R1H475MT CRCW12061K00FKEA CRCW12066R20JNEA TC350 TDK ATC ATC ATC

Freescale Semiconductor Technical Data Document Number: MRF8S7120N www.DataSheet4U.com Rev.

0, 5/2010 RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 728 to 768 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg., IQ Magn

MRF8S7120NR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative