MRF8372R2, MRF8372R1 Datasheet - Motorola

MRF8372R2 (MRF8372R1 / MRF8372R2) RF LOW POWER TRANSISTOR

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF8372/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) State of the Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Imp.

MRF8372R2 Features

* rs H.K. Ltd.; 8B Tai Ping Industrial Park,

* US & Canada ONLY 1

* 800

* 774

* 1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852

* 26629298 INTERNET: http://motorola.com/sps MRF8372R1, R2 6 ◊ www.DataSheet4U.com MRF8372/D MOTOROLA RF DEVICE DATA DataSheet 4 U .c

MRF8372R1_Motorola.pdf

MRF8372R2 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF8372R2, MRF8372R1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF8372R2, MRF8372R1

Manufacturer:

Motorola

File Size:

266.52 KB

Description:

(mrf8372r1 / mrf8372r2) rf low power transistor.

Note:

This datasheet PDF includes multiple part numbers: MRF8372R2, MRF8372R1.
Please refer to the document for exact specifications by model.

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TAGS

MRF8372R2 MRF8372R1 MRF8372R1 MRF8372R2 LOW POWER TRANSISTOR Motorola

MRF8372R2 Distributor