Part number:
MRF890
Manufacturer:
Advanced Semiconductor
File Size:
180.26 KB
Description:
Npn silicon rf power transistor.
MRF890_AdvancedSemiconductor.pdf
Datasheet Details
MRF890 Features
* Pg = 9.0 dB min. @ 900 MHz
* P1dB = 2.0 Watts min. at 900 MHz
* Omnigold™ Metalization System B MAXIMUM RATINGS VCBO VCER VEBO PDISS TJ TSTG θJC 55 V 30 V 4.0 V 7.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 25 C/W ° CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO
MRF890_AdvancedSemiconductor.pdf
Datasheet Details
MRF890
Advanced Semiconductor
180.26 KB
Npn silicon rf power transistor.
📁 Related Datasheet
MRF891 RF POWER TRANSISTORS (Motorola)
MRF891S RF POWER TRANSISTORS (Motorola)
MRF892 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
MRF894 RF POWER TRANSISTOR (Motorola)
MRF897 RF POWER TRANSISTOR (Motorola)
MRF897R RF POWER TRANSISTOR (Motorola)
MRF898 RF POWER TRANSISTOR (Motorola)
MRF899 RF POWER TRANSISTOR (Motorola)
MRF890 Distributor