MRF890 - NPN SILICON RF POWER TRANSISTOR
MRF890 Features
* Pg = 9.0 dB min. @ 900 MHz
* P1dB = 2.0 Watts min. at 900 MHz
* Omnigold™ Metalization System B MAXIMUM RATINGS VCBO VCER VEBO PDISS TJ TSTG θJC 55 V 30 V 4.0 V 7.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 25 C/W ° CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO
