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MRF837 Datasheet - Advanced Semiconductor

MRF837 NPN SILICON RF LOW POWER TRANSISTOR

The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. PACKAGE STYLE MACRO-X MILLIMETERS DIM MIN A C D F G 4.44 1.90 0.84 0.20 0.76 7.24 10.54 *MAX 5.21 2.54 0.99 0.30 0.14 8.13 11.43 1.65 INCHES MIN 0.175 0.075 0.033 0.008 0..

MRF837 Features

* INCLUDE:

* Min gain 8.0 dB @ 750 mW/870 MHz

* Silicon Nitride passivated

* Low cost Plastic Package K L N IC VCBO PDISS TJ TSTG θJC 200 mA 36 V 1.0 W @ TC = 25 °C -65 °Cto +150 °C -65 °Cto +150 °C 40 °C/W 1 = COLLECTOR 2 =EMITER 3 = BASE CHARACTERISTICS SYMBOL BVCES BVCEO

MRF837_AdvancedSemiconductor.pdf

Preview of MRF837 PDF

Datasheet Details

Part number:

MRF837

Manufacturer:

Advanced Semiconductor

File Size:

187.54 KB

Description:

Npn silicon rf low power transistor.

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MRF837 MRF837 NPN SILICON LOW POWER TRANSISTOR Advanced Semiconductor

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