MRF8372R1 Datasheet (Motorola) - (MRF8372R1 / MRF8372R2) RF LOW POWER TRANSISTOR

MRF8372R1, (MRF8372R1 / MRF8372R2) RF LOW POWER TRANSISTOR

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF8372/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges.

Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) State of the Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Imp

MRF8372R1 Features

* rs H.K. Ltd.; 8B Tai Ping Industrial Park,

* US & Canada ONLY 1

* 800

* 774

* 1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852

* 26629298 INTERNET: http://motorola.com/sps MRF8372R1, R2 6 ◊ www.DataSheet4U.com MRF8372/D MOTOROLA RF DEVICE DATA DataSheet 4 U .c