MRF8S18260HR6 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF8S18260HR6, RF Power Field Effect Transistors

Part Number C1 2.2 pF Chip Capacitor ATC600F2R2BT250XT C2, C7, C8, C14, C20, C21 15 pF Chip Capacitors ATC600F150JT250XT C3, C4, C5, C6 C16, C17, C18, C19 1.0 pF Chip Capacitors ATC600F1R0BT250XT C9, C10, C22, C23 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L C11, C12 47 μF, 35 V Ele

Freescale Semiconductor Technical Data Document Number: MRF8S18260H Rev.

1, 2/2012 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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MRF8S18260HR6 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative