MRF8S18260HR6 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF8S18260H Rev.1, 2/2012 RF Power Field Effect Transistors N *Channel Enhancement Part Number C1 2.

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Datasheet Specifications

Part number: MRF8S18260HR6
Manufacturer: Freescale Semiconductor
File Size: 499.80 KB
Datasheet: MRF8S18260HR6-FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative

Applications

* with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* 1BT6yap0ni0dcwamlidASt,ihnPg=oleu3t
* . =8C4a7rM4riHWerzaW,ttIsn
* pCAuDvtgMS. ,iAgIQnPaeMlrPfaoAgrRnmita=und7ce. e5C: dVliBpDpD@in=g03,.00C1hV%aon

MRF8S18260HR6 Distributors

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MRF8S18260HR6 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF8S18260HR6-like datasheet