MRF8S18260HR6 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF8S18260HR6 Datasheet Preview — Preview of MRF8S18260HR6 PDF

Datasheet Details

Part number	MRF8S18260HR6
Manufacturer	Freescale Semiconductor
File Size	499.80 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S18260HR6-FreescaleSemiconductor.pdf

MRF8S18260HR6 Product details

Description

Part Number C1 2.2 pF Chip Capacitor ATC600F2R2BT250XT C2, C7, C8, C14, C20, C21 15 pF Chip Capacitors ATC600F150JT250XT C3, C4, C5, C6 C16, C17, C18, C19 1.0 pF Chip Capacitors ATC600F1R0BT250XT C9, C10, C22, C23 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L C11, C12 47 μF, 35 V Electrolytic Capacitors 476KXM050M C13 0.6 pF Chip Capacitor ATC600F0R6BT250XT C15 0.4 pF Chip Capacitor ATC600F0R4BT250XT C24, C25 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH C

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Apr 29, 2015 |