Datasheet4U Logo Datasheet4U.com

MRF8S21140HR3 Datasheet - NXP

MRF8S21140HR3 RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev. 0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.

MRF8S21140HR3 Datasheet (258.69 KB)

Preview of MRF8S21140HR3 PDF
MRF8S21140HR3 Datasheet Preview Page 2 MRF8S21140HR3 Datasheet Preview Page 3

Datasheet Details

Part number:

MRF8S21140HR3

Manufacturer:

NXP ↗

File Size:

258.69 KB

Description:

Rf power field effect transistors.

📁 Related Datasheet

MRF8S21140HSR3 RF Power Field Effect Transistors (NXP)

MRF8S21200HR6 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF8S21200HSR6 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF8S26060HR3 RF Power Field Effect Transistors (Motorola Semiconductor)

MRF8S26060HSR3 RF Power Field Effect Transistors (Motorola Semiconductor)

MRF8S26120HR3 RF Power Field Effect Transistor (Motorola)

MRF8S26120HR3 RF Power Field Effect Transistor (Motorola)

MRF8S26120HSR3 RF Power Field Effect Transistor (Motorola)

TAGS

MRF8S21140HR3 Power Field Effect Transistors NXP

MRF8S21140HR3 Distributor