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MRF8S21140HR3 Datasheet - NXP

MRF8S21140HR3 - RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev.

0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3

MRF8S21140HR3-NXP.pdf

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Datasheet Details

Part number:

MRF8S21140HR3

Manufacturer:

NXP ↗

File Size:

258.69 KB

Description:

Rf power field effect transistors.

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