MRF8S21140HR3 RF Power Field Effect Transistors

NXP

Description

Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev.0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Late.

📥 Download Datasheet

MRF8S21140HR3 Datasheet Preview — Preview of MRF8S21140HR3 PDF

Datasheet Specifications

Part number: MRF8S21140HR3
Manufacturer: NXP ↗
File Size: 258.69 KB
Datasheet: MRF8S21140HR3-NXP.pdf
Description: RF Power Field Effect Transistors

Applications

* with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Si

MRF8S21140HR3 Distributors

📁 Related Datasheet

MRF8S21200HR6 MRF8S21200HSR6 MRF8S26060HR3 MRF8S26060HSR3 MRF8S26120HR3 MRF8S26120HSR3

📌 All Tags

MRF8S21140HR3 Power Field Effect Transistors NXP

NXP MRF8S21140HR3-like datasheet