MRF8S21140HR3 Datasheet - NXP

MRF8S21140HR3, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev.0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Late.

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MRF8S21140HR3-NXP.pdf

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Datasheet Details

Part number:

MRF8S21140HR3

Manufacturer:

NXP ↗

File Size:

258.69 KB

Description:

RF Power Field Effect Transistors

Applications

* with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Si

MRF8S21140HR3 Distributors

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MRF8S21140HR3 Power Field Effect Transistors NXP

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