MRF8S21140HR3 - RF Power Field Effect Transistors
Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev.
0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3
