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MRF8P9040GNR1 Datasheet - NXP

MRF8P9040GNR1 RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for CDMA, W CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Driver Application 900 MHz Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Mag.

MRF8P9040GNR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate

* Source Voltage Range for Improved Class C Operation

MRF8P9040GNR1 Datasheet (897.73 KB)

Preview of MRF8P9040GNR1 PDF

Datasheet Details

Part number:

MRF8P9040GNR1

Manufacturer:

NXP ↗

File Size:

897.73 KB

Description:

Rf power field effect transistors.

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MRF8P9040GNR1 Power Field Effect Transistors NXP

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