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MRF8P9040GNR1, MRF8P9040NR1 Datasheet - NXP

MRF8P9040GNR1 - RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for CDMA, W CDMA and LTE base station applications with frequencies from 700 to 1000 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Driver Application 900 MHz Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Mag

MRF8P9040GNR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate

* Source Voltage Range for Improved Class C Operation

MRF8P9040NR1-NXP.pdf

This datasheet PDF includes multiple part numbers: MRF8P9040GNR1, MRF8P9040NR1. Please refer to the document for exact specifications by model.
MRF8P9040GNR1 Datasheet Preview Page 2 MRF8P9040GNR1 Datasheet Preview Page 3

Datasheet Details

Part number:

MRF8P9040GNR1, MRF8P9040NR1

Manufacturer:

NXP ↗

File Size:

897.73 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF8P9040GNR1, MRF8P9040NR1.
Please refer to the document for exact specifications by model.

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