MRF8P9040GNR1 - RF Power Field Effect Transistors
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for CDMA, W CDMA and LTE base station applications with frequencies from 700 to 1000 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Driver Application 900 MHz Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Mag
MRF8P9040GNR1 Features
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation
