MRF8P9040GNR1, MRF8P9040NR1 Datasheet - NXP

MRF8P9040GNR1, MRF8P9040NR1, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for CDM.

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MRF8P9040NR1-NXP.pdf

MRF8P9040GNR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF8P9040GNR1, MRF8P9040NR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF8P9040GNR1, MRF8P9040NR1

Manufacturer:

NXP ↗

File Size:

897.73 KB

Description:

RF Power Field Effect Transistors

Note:

This datasheet PDF includes multiple part numbers: MRF8P9040GNR1, MRF8P9040NR1.
Please refer to the document for exact specifications by model.

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation

Applications

* with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Driver Application
* 900 MHz
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg. , IQ Magni

MRF8P9040GNR1 Distributors

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