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MRF8P9040GNR1

RF Power Field Effect Transistors

MRF8P9040GNR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate

* Source Voltage Range for Improved Class C Operation

MRF8P9040GNR1 Datasheet (897.73 KB)

Preview of MRF8P9040GNR1 PDF

Datasheet Details

Part number:

MRF8P9040GNR1

Manufacturer:

NXP ↗

File Size:

897.73 KB

Description:

Rf power field effect transistors.
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N

*Channel Enhancement

*Mode Lateral MOSFETs Designed for CDM.

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MRF8P9040GNR1 Power Field Effect Transistors NXP

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