Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev.
0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Cha