Short RF Bead 0.2 pF Chip Capacitor 39 pF Chip Capacitors 1.1 pF Chip Capacitors 2.7 pF Chip Capacitors 5.1 pF Chip Capacitors 3.0 pF Chip Capacitors 10 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 1.0 pF Chip Capacitors 0.5 pF Chip Capacitors 0.8 pF Chip Capac
Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev.
0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Cha
MRF8P9300HSR6 Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source
MRF8P9300HR6_FreescaleSemiconductor.pdf
Datasheet Details
MRF8P9300HSR6, MRF8P9300HR6
Freescale Semiconductor
411.05 KB
Rf power field effect transistors.
This datasheet PDF includes multiple part numbers: MRF8P9300HSR6, MRF8P9300HR6.
Please refer to the document for exact specifications by model.
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