MRF8P23080HSR3 Datasheet - Freescale Semiconductor

MRF8P23080HSR3 RF Power Field Effect Transistors

0.8 pF Chip Capacitors 1.0 pF Chip Capacitors 18 pF Chip Capacitors 8.2 pF Chip Capacitors 1.0 μF, 50 V Chip Capacitors 10 pF Chip Capacitors 5.6 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 50 Ω, 1/4 W Chip Resistor 2500 MHz Band 90°, 3 dB Chip Hybrid Coupler .

Freescale Semiconductor Technical Data Document Number: MRF8P23080H www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Doherty Single Carrier W CDMA Performance: VDD = 28 Volts, IDQA = 280 m.

MRF8P23080HSR3 Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Large

* Signal Load

* Pull Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use

MRF8P23080HSR3 Datasheet (690.62 KB)

MRF8P23080HSR3 Datasheet Preview — Preview of MRF8P23080HSR3 PDF

Datasheet Details

Part number:

MRF8P23080HSR3

Manufacturer:

Freescale Semiconductor

File Size:

690.62 KB

Description:

Rf power field effect transistors.

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MRF8P23080HSR3 Power Field Effect Transistors Freescale Semiconductor

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