MRF8P23080HSR3 - RF Power Field Effect Transistors
0.8 pF Chip Capacitors 1.0 pF Chip Capacitors 18 pF Chip Capacitors 8.2 pF Chip Capacitors 1.0 μF, 50 V Chip Capacitors 10 pF Chip Capacitors 5.6 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 50 Ω, 1/4 W Chip Resistor 2500 MHz Band 90°, 3 dB Chip Hybrid Coupler
Freescale Semiconductor Technical Data Document Number: MRF8P23080H www.DataSheet4U.com Rev.
0, 5/2010 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Doherty Single Carrier W CDMA Performance: VDD = 28 Volts, IDQA = 280 m
MRF8P23080HSR3 Features
* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
