Datasheet4U Logo Datasheet4U.com

MRF8P26080HSR3, MRF8P26080HR3 RF Power Field Effect Transistors

📥 Download Datasheet  Datasheet Preview Page 1

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for W Part Number C1, C2, C3, C4, C5, C6, C7, C8 22 pF Chip Capacitors ATC600F220JT250XT C9, C10 3.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF8P26080HSR3, MRF8P26080HR3. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
MRF8P26080HSR3, MRF8P26080HR3
Manufacturer
Freescale Semiconductor
File Size
558.08 KB
Datasheet
MRF8P26080HR3-FreescaleSemiconductor.pdf
Description
RF Power Field Effect Transistors
Note
This datasheet PDF includes multiple part numbers: MRF8P26080HSR3, MRF8P26080HR3.
Please refer to the document for exact specifications by model.

Features

* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use

Applications

* with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Doherty Single
* Carrier W
* CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg. , IQ

MRF8P26080HSR3 Distributors

📁 Related Datasheet

📌 All Tags

Freescale Semiconductor MRF8P26080HSR3-like datasheet