MRF8P26080HSR3, MRF8P26080HR3 Datasheet (Freescale Semiconductor)

MRF8P26080HSR3, MRF8P26080HR3, RF Power Field Effect Transistors

Part Number C1, C2, C3, C4, C5, C6, C7, C8 22 pF Chip Capacitors ATC600F220JT250XT C9, C10 3.3 μF, 50 V Chip Capacitors GRM32DR71H335KA88B C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L C13, C14 4.7 μF, 50 V Chip Capacitors GRM31CR71H475KA12L C15, C16 0.6 pF Chip Capacitors A

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical Doherty Single Carrier W CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ Magn

MRF8P26080HSR3 Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Large

* Signal Load

* Pull Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use