MRF8P20160HR3 RF Power Field Effect Transistors

Motorola Semiconductor Products

Description

DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev.1, 7/2010 RF Power Field Effect Transistors N *Channel.
10 pF Chip Capacitors 0.

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Datasheet Specifications

Part number: MRF8P20160HR3
Manufacturer: Motorola Semiconductor Products
File Size: 834.56 KB
Datasheet: MRF8P20160HR3_MotorolaSemiconductorProducts.pdf
Description: RF Power Field Effect Transistors

Features

* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use

Applications

* with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Doherty Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg. , IQ Magnitude Clippin

MRF8P20160HR3 Distributors

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MRF8P20160HR3 Power Field Effect Transistors Motorola Semiconductor Products

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