* Designed for Wide Instantaneous Bandwidth Applications
* Designed for Wideband Applications that Require 100 MHz Signal Bandwidth
* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characteri
MRF8P23160WHSR3 Datasheet (530.30 KB)
MRF8P23160WHSR3
Freescale Semiconductor
530.30 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF8P23160WH Rev. 0, 12/2011
RF Power Field Effect Transistors
N
*Channel Enhancement.
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