MRF8P23160WHSR3 - RF Power Field Effect Transistors
Part Number C1, C4, C5 0.2 pF Chip Capacitors ATC600F0R2BT250XT C2, C3 0.3 pF Chip Capacitors ATC600F0R3BT250XT C6 3.3 pF Chip Capacitor ATC600F3R3BT250XT C7 5.6 pF Chip Capacitor ATC600F5R6BT250XT C8, C9, C12, C13 6.8 pF Chip Capacitors ATC600F6R8BT250XT C10, C11 8.2 pF Chip Capacit
Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev.
0, 12/2011 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz.
CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d wC1i.ad2rtrhVied=rcW3, .P8 oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el I:PQVADRMDa==g9n2.i9t8uddVBeo
MRF8P23160WHSR3 Features
* Designed for Wide Instantaneous Bandwidth Applications
* Designed for Wideband Applications that Require 100 MHz Signal Bandwidth
* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characteri
