* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation
MRF8P9040NBR1 Datasheet (897.73 KB)
MRF8P9040NBR1
897.73 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N
*Channel Enhancement
*Mode Lateral MOSFETs
Designed for CDM.
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