MRF8S9200NR3 RF Power Field Effect Transistor

NXP

Description

Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev.1, 5/2010 RF Power Field Effect Transistor N *Channel Enhancement .

📥 Download Datasheet

MRF8S9200NR3 Datasheet Preview — Preview of MRF8S9200NR3 PDF

Datasheet Specifications

Part number: MRF8S9200NR3
Manufacturer: NXP ↗
File Size: 533.12 KB
Datasheet: MRF8S9200NR3-NXP.pdf
Description: RF Power Field Effect Transistor

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative

Applications

* with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.8

MRF8S9200NR3 Distributors

📁 Related Datasheet

MRF8S9220HR3 MRF8S9220HSR3 MRF8S9260HR3 MRF8S9260HSR3 MRF8S9100HR3 MRF8S9100HSR3

📌 All Tags

MRF8S9200NR3 Power Field Effect Transistor NXP

NXP MRF8S9200NR3-like datasheet