* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative
MRF8S9200NR3 Datasheet (533.12 KB)
MRF8S9200NR3
533.12 KB
Rf power field effect transistor.
Freescale Semiconductor Technical Data
Document Number: MRF8S9200N Rev. 1, 5/2010
RF Power Field Effect Transistor
N
*Channel Enhancement
.
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