MRF8S9100HR3 - RF Power Field Effect Transistors
Part Number 2743019447 ATC100B470JT500XT ATC100B5R6BT500XT ATC100B7R5BT500XT ATC100B9R1BT500XT T491D106K035AT ATC100B130BT500XT ATC100B2R7BT500XT ATC100B6R2BT500XT ATC100B1R8BT500XT ATC100B200JT500XT C1825C564J5RAC - TU MCGPR63V477M13X26 - RH A04TJLC CRCW12060000Z0EA AD255A - 0300 - 55 - 11 Manufact
Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev.
0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.3 19.1 hD (
MRF8S9100HR3 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* RoHS Co
