MRF8S9170NR3 - RF Power Field Effect Transistor
Short Ferrite Bead 39 pF Chip Capacitors 2.0 pF Chip Capacitor 3.3 pF Chip Capacitors 100 μF, 50 V Electrolytic Capacitor 3.3.
μF, 100 V Chip Capacitor 0.1 μF Chip Capacitors 6.8 pF Chip Capacitors 6.2 pF Chip Capacitors 5.6 pF Chip Capacitors 4.7 pF Chip Capacitor 2.2 pF Chip Capacitor 22 μF, 50 V
Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev.
0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MH
MRF8S9170NR3 Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Sour
