* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* RoHS Co
MRF8S9100HSR3 Datasheet (335.08 KB)
MRF8S9100HSR3
Freescale Semiconductor
335.08 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF8S9100H Rev. 0, 9/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode .
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