* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Sour
MRF8S9200NR3 Datasheet (328.60 KB)
MRF8S9200NR3
Freescale Semiconductor
328.60 KB
Rf power field effect transistor.
Freescale Semiconductor Technical Data
Document Number: MRF8S9200N Rev. 0, 8/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode L.
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