MRF8S9200NR3 - RF Power Field Effect Transistor
Ferrite Beads, Short 39 pF Chip Capacitors 2 pF Chip Capacitor 6.2 pF Chip Capacitor 2.2 μF Chip Capacitor 3.3 pF Chip Capacitors 6.8 pF Chip Capacitors 5.1 pF Chip Capacitors 0.8 pF Chip Capacitors 0.5 pF Chip Capacitors 1.5 pF Chip Capacitor 1.2 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 470 μF
Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev.
0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MH
MRF8S9200NR3 Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Sour
