MRF8S9260HR3 - RF Power Field Effect Transistors
Part Number C1, C6, C9, C12, C16 36 pF Chip Capacitors ATC100B360JT500XT C2 0.4 pF Chip Capacitor ATC100B0R4BT500XT C3 4.7 pF Chip Capacitor ATC100B4R7BT500XT C4, C5 8.2 pF Chip Capacitors ATC100B8R2BT500XT C7 C8, C13, C14, C19, C20 4.7 F, 50 V Chip Capacitor 10 F, 50 V Chip Capacit
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
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MRF8S9260HR3 Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate
* Sour
