MRF8S9220HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF8S9220H Rev.0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
39 pF Chip Capacitors 0.

📥 Download Datasheet

MRF8S9220HR3 Datasheet Preview — Preview of MRF8S9220HR3 PDF

Datasheet Specifications

Part number: MRF8S9220HR3
Manufacturer: Freescale Semiconductor
File Size: 388.20 KB
Datasheet: MRF8S9220HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Sour

Applications

* with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 65 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input

MRF8S9220HR3 Distributors

📁 Related Datasheet

MRF8S21140HR3 MRF8S21140HSR3 MRF8S26060HR3 MRF8S26060HSR3 MRF8S26120HR3 MRF8S26120HSR3

📌 All Tags

MRF8S9220HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF8S9220HR3-like datasheet