MRF8S9220HR3 - RF Power Field Effect Transistors
39 pF Chip Capacitors 0.3 pF Chip Capacitor 1.0 pF Chip Capacitors 1.2 pF Chip Capacitors 0.7 pF Chip Capacitor 10 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitor 47 μF, 50 V Electrolytic Capacitor 1.3 pF Chip Capacitor 5.1 pF Chip Capacitors 5.6 pF Chip Capacitor 6.2 pF Chip Capacitor 6.8 pF Chip Ca
Freescale Semiconductor Technical Data Document Number: MRF8S9220H Rev.
0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 920 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 65 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84
MRF8S9220HR3 Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Sour
