* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative
MRF8S26120HSR3 Datasheet (534.11 KB)
MRF8S26120HSR3
Motorola
534.11 KB
Rf power field effect transistor.
Freescale Semiconductor Technical Data
Document Number: MRF8S26120H www.DataSheet4U.com Rev. 0, 6/2010
RF Power Field Effect Transistors
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