MRF8S26120HSR3 - RF Power Field Effect Transistor
22 μF, 35 V Tantalum Capacitor 330 nF, 100 V Chip Capacitor 15 nF, 100 V Chip Capacitor 2.2 μF, 100 V Chip Capacitors 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 27 pF Chip Capacitors 0.8 pF Chip Capacitor 1 kΩ, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 7.5 Ω, 1/4 W Chip Re
Freescale Semiconductor Technical Data Document Number: MRF8S26120H www.DataSheet4U.com Rev.
0, 6/2010 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout =
MRF8S26120HSR3 Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative
