MRF8S21200HR6 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev.1, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mod.
8.

📥 Download Datasheet

MRF8S21200HR6 Datasheet Preview — Preview of MRF8S21200HR6 PDF

Datasheet Specifications

Part number: MRF8S21200HR6
Manufacturer: Freescale Semiconductor
File Size: 345.17 KB
Datasheet: MRF8S21200HR6_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Sour

Applications

* with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 48 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Inp

MRF8S21200HR6 Distributors

📁 Related Datasheet

MRF8S21140HR3 MRF8S21140HSR3 MRF8S26060HR3 MRF8S26060HSR3 MRF8S26120HR3 MRF8S26120HSR3

📌 All Tags

MRF8S21200HR6 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF8S21200HR6-like datasheet