MRF8S21200HR6 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF8S21200HR6 Datasheet Preview — Preview of MRF8S21200HR6 PDF

Datasheet Details

Part number	MRF8S21200HR6
Manufacturer	Freescale Semiconductor
File Size	345.17 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S21200HR6_FreescaleSemiconductor.pdf

MRF8S21200HR6 Product details

Description

8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 0.6 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 0.5 pF Chip Capacitor 0.8 pF Chip Capacitor 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 22 Ω, 1/4 W Chip Resistor 12 Ω, 1/4 W Chip Resistors 0 Ω, 3 A Chip Resistors 0.030″, εr = 3.5 Part Number ATC100B8R2CT500XT ATC100B0R2BT500XT ATC100B0R6BT500XT C5750X5R1H106MT ATC100B0R5BT500XT ATC100B0R8BT500XT ATC100B0R3BT500XT MCGPR63V477M13X26 - RH CRCW120622R0FKEA CRCW120612R0FKEA CRCW12060000Z0EA

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.
In Tape and Reel. R6 Suffix = 150 Units per 56.

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Published: Feb 9, 2010 |