MRF8S21140HSR3, MRF8S21140HR3 RF Power Field Effect Transistors

NXP

Description

Freescale Semiconductor Technical Data Document Number: MRF8S21140H Rev.0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Late.

📥 Download Datasheet

MRF8S21140HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF8S21140HSR3, MRF8S21140HR3. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: MRF8S21140HSR3, MRF8S21140HR3
Manufacturer: NXP ↗
File Size: 258.69 KB
Datasheet: MRF8S21140HR3-NXP.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF8S21140HSR3, MRF8S21140HR3.
Please refer to the document for exact specifications by model.

Applications

* with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 970 mA, Pout = 34 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Si

MRF8S21140HSR3 Distributors

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MRF8S21140HR3 Power Field Effect Transistors NXP

NXP MRF8S21140HSR3-like datasheet