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MRF101AN - RF Power LDMOS Transistors

MRF101AN Description

NXP Semiconductors Technical Data Document Number: MRF101AN Rev.1, 05/2019 RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement.

MRF101AN Features

* Mirror pinout versions (A and B) to simplify use in a push
* pull, two
* up configuration
* Characterized from 30 to 50 V

MRF101AN Applications

* The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.56 (1) 27 (2) 40.68 (3) 50 (4) 81.36 (5) 87.5
* 108 (6,7) 136
* 174 (7,8) 230 (9) CW CW CW CW CW CW CW Pulse

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Datasheet Details

Part number
MRF101AN
Manufacturer
NXP ↗
File Size
836.13 KB
Datasheet
MRF101AN-NXP.pdf
Description
RF Power LDMOS Transistors

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Power LDMOS Transistors NXP
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