* Mirror pinout versions (A and B) to simplify use in a push
* pull, two
* up configuration
* Characterized from 30 to 50 V
* Suitable for linear application
* Integrated ESD protection with greater negative gate
* source voltage range for improved Class C operation
MRF101AN Datasheet (836.13 KB)
MRF101AN
836.13 KB
Rf power ldmos transistors.
NXP Semiconductors Technical Data
Document Number: MRF101AN Rev. 1, 05/2019
RF Power LDMOS Transistors
High Ruggedness N
*Channel Enhancement.
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