MRF18060BLR3 - RF Power Field Effect Transistor

NXP

MRF18060BLR3 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base s.

MRF18060BLR3 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Available with Low Gold Plating Thickness on Leads

MRF18060BLR3 Applications

* with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz.
* GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain

📥 Download Datasheet

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Datasheet Details

Part number: MRF18060BLR3
Manufacturer: NXP ↗
File Size: 350.69 KB
Datasheet: MRF18060BLR3-NXP.pdf
Description: RF Power Field Effect Transistor

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