Datasheet Details
- Part number
- MRF18060BLR3
- Manufacturer
- NXP ↗
- File Size
- 350.69 KB
- Datasheet
- MRF18060BLR3-NXP.pdf
- Description
- RF Power Field Effect Transistor
MRF18060BLR3 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base s.
MRF18060BLR3 Features
* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Available with Low Gold Plating Thickness on Leads
MRF18060BLR3 Applications
* with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz.
* GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain
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