* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Available with Low Gold Plating Thickness on Leads
MRF18060BLR3 Datasheet (350.69 KB)
MRF18060BLR3
350.69 KB
Rf power field effect transistor.
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base s.
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