Datasheet4U Logo Datasheet4U.com

MRF18060BLR3 RF Power Field Effect Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base s.

📥 Download Datasheet

Preview of MRF18060BLR3 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
MRF18060BLR3
Manufacturer
NXP ↗
File Size
350.69 KB
Datasheet
MRF18060BLR3-NXP.pdf
Description
RF Power Field Effect Transistor

Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Available with Low Gold Plating Thickness on Leads

Applications

* with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz.
* GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain

MRF18060BLR3 Distributors

📁 Related Datasheet

📌 All Tags

NXP MRF18060BLR3-like datasheet