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MRF18060BLSR3, MRF18060BLR3 - RF Power Field Effect Transistor

MRF18060BLSR3 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base s.

MRF18060BLSR3 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Available with Low Gold Plating Thickness on Leads

MRF18060BLSR3 Applications

* with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz.
* GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF18060BLSR3, MRF18060BLR3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF18060BLSR3, MRF18060BLR3
Manufacturer
NXP ↗
File Size
350.69 KB
Datasheet
MRF18060BLR3-NXP.pdf
Description
RF Power Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: MRF18060BLSR3, MRF18060BLR3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistor NXP
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