MRF101BN Datasheet - NXP

MRF101BN RF Power LDMOS Transistors

NXP Semiconductors Technical Data Document Number: MRF101AN Rev. 1, 05/2019 RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs MRF101AN MRF101BN These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps.

MRF101BN Features

* Mirror pinout versions (A and B) to simplify use in a push

* pull, two

* up configuration

* Characterized from 30 to 50 V

* Suitable for linear application

* Integrated ESD protection with greater negative gate

* source voltage range for improved Class C operation

MRF101BN Datasheet (836.13 KB)