Datasheet4U Logo Datasheet4U.com

MRF1K50GN, MRF1K50N RF Power LDMOS Transistors

MRF1K50GN Description

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs These high r.

MRF1K50GN Features

* High drain
* source avalanche energy absorption capability
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Characterized from 30 to 50 V for ease of use

MRF1K50GN Applications

* as well as radio and VHF TV broadcast, sub
* GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 87.5

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF1K50GN, MRF1K50N. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MRF1K50GN, MRF1K50N
Manufacturer
NXP ↗
File Size
821.60 KB
Datasheet
MRF1K50N-NXP.pdf
Description
RF Power LDMOS Transistors
Note
This datasheet PDF includes multiple part numbers: MRF1K50GN, MRF1K50N.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • MRF10005 - The RF Line Microwave Power Transistor (Tyco)
  • MRF1000MB - Microwave Pulse Power Transistors (Tyco)
  • MRF1001A - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
  • MRF1002 - MICROWAVE POWER TRANSISTOR (Motorola)
  • MRF10031 - MICROWAVE POWER TRANSISTOR (Motorola)
  • MRF1004MA - NPN SILICON RF POWER TRANSISTOR (ASI)
  • MRF1004MB - MICROWAVE POWER TRANSISTORS (Tyco)
  • MRF10070 - MICROWAVE POWER TRANSISTOR (Motorola)

📌 All Tags

Power LDMOS Transistors NXP
NXP MRF1K50GN-like datasheet