Description
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs These high r.
Features
* High drain
* source avalanche energy absorption capability
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Characterized from 30 to 50 V for ease of use
Applications
* as well as radio and VHF TV broadcast,
sub
* GHz aerospace and mobile radio applications. Their unmatched input and
output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
Pout (W)
Gps (dB)
ηD (%)
87.5
