Part number:
MRF1K50H
Manufacturer:
File Size:
1.07 MB
Description:
Rf power ldmos transistor.
Datasheet Details
Part number:
MRF1K50H
Manufacturer:
File Size:
1.07 MB
Description:
Rf power ldmos transistor.
MRF1K50H, RF Power LDMOS Transistor
NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N Channel Enhancement Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub GHz aerospace and mobile radio applications.
Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Typ
MRF1K50H Features
* High drain
* source avalanche energy absorption capability
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Characterized from 30 to 50 V for ease of use
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