Datasheet4U Logo Datasheet4U.com

MRF1K50H

RF Power LDMOS Transistor

MRF1K50H Features

* High drain

* source avalanche energy absorption capability

* Unmatched input and output allowing wide frequency range utilization

* Device can be used single

* ended or in a push

* pull configuration

* Characterized from 30 to 50 V for ease of use

MRF1K50H Datasheet (1.07 MB)

Preview of MRF1K50H PDF

Datasheet Details

Part number:

MRF1K50H

Manufacturer:

NXP ↗

File Size:

1.07 MB

Description:

Rf power ldmos transistor.
NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N

*Channel Enhancement

*Mode Lateral MOSFET This high rugg.

📁 Related Datasheet

MRF1K50GN RF Power LDMOS Transistors (NXP)

MRF1K50N RF Power LDMOS Transistors (NXP)

MRF10005 The RF Line Microwave Power Transistor (Tyco)

MRF10005 MICROWAVE POWER TRANSISTOR (Motorola)

MRF1000MB Microwave Pulse Power Transistors (Tyco)

MRF1001A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)

MRF1002 MICROWAVE POWER TRANSISTOR (Motorola)

MRF10031 MICROWAVE POWER TRANSISTOR (Motorola)

MRF10031 Microwave Power Silicon NPN Transistor (MACOM)

MRF1004MA NPN SILICON RF POWER TRANSISTOR (ASI)

TAGS

MRF1K50H Power LDMOS Transistor NXP

Image Gallery

MRF1K50H Datasheet Preview Page 2 MRF1K50H Datasheet Preview Page 3

MRF1K50H Distributor