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MRF1K50H RF Power LDMOS Transistor

MRF1K50H Description

NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N *Channel Enhancement *Mode Lateral MOSFET This high rugg.

MRF1K50H Features

* High drain
* source avalanche energy absorption capability
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Characterized from 30 to 50 V for ease of use

MRF1K50H Applications

* as well as radio and VHF TV broadcast, sub
* GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 27 81.36 (1) 8

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Datasheet Details

Part number
MRF1K50H
Manufacturer
NXP ↗
File Size
1.07 MB
Datasheet
MRF1K50H-NXP.pdf
Description
RF Power LDMOS Transistor

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Power LDMOS Transistor NXP
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