* High drain
* source avalanche energy absorption capability
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Characterized from 30 to 50 V for ease of use
MRF1K50N Datasheet (821.60 KB)
MRF1K50N
821.60 KB
Rf power ldmos transistors.
NXP Semiconductors Technical Data
RF Power LDMOS Transistors
High Ruggedness N
*Channel Enhancement
*Mode Lateral MOSFETs
These high r.
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