MRF1K50N RF Power LDMOS Transistors

NXP

Description

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement *Mode Lateral MOSFETs These high r.

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Datasheet Specifications

Part number: MRF1K50N
Manufacturer: NXP ↗
File Size: 821.60 KB
Datasheet: MRF1K50N-NXP.pdf
Description: RF Power LDMOS Transistors

Features

* High drain
* source avalanche energy absorption capability
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Characterized from 30 to 50 V for ease of use

Applications

* as well as radio and VHF TV broadcast, sub
* GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 87.5

MRF1K50N Distributors

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MRF1K50N Power LDMOS Transistors NXP

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