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MRF18060BSR3, MRF18060BR3 Datasheet - Motorola

MRF18060BSR3 RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Ga.

MRF18060BSR3 Features

* PER ANSI Y14.5M

* 1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION

MRF18060BR3_Motorola.pdf

This datasheet PDF includes multiple part numbers: MRF18060BSR3, MRF18060BR3. Please refer to the document for exact specifications by model.
MRF18060BSR3 Datasheet Preview Page 2 MRF18060BSR3 Datasheet Preview Page 3

Datasheet Details

Part number:

MRF18060BSR3, MRF18060BR3

Manufacturer:

Motorola

File Size:

490.03 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF18060BSR3, MRF18060BR3.
Please refer to the document for exact specifications by model.

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TAGS

MRF18060BSR3 MRF18060BR3 Power Field Effect Transistors Motorola

MRF18060BSR3 Distributor