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MRF18060BSR3, MRF18060BR3 RF Power Field Effect Transistors

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect T.

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This datasheet PDF includes multiple part numbers: MRF18060BSR3, MRF18060BR3. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
MRF18060BSR3, MRF18060BR3
Manufacturer
Motorola
File Size
490.03 KB
Datasheet
MRF18060BR3_Motorola.pdf
Description
RF Power Field Effect Transistors
Note
This datasheet PDF includes multiple part numbers: MRF18060BSR3, MRF18060BR3.
Please refer to the document for exact specifications by model.

Features

* PER ANSI Y14.5M
* 1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION

Applications

* with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz.
* GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain

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