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MRF18060ALR3 - RF Power Field Effect Transistors

MRF18060ALR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18060A Rev.9, 5/2006 RF Power Field Effect Transistors N - Channel.

MRF18060ALR3 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Available with Low Gold Plating Thickness on Leads

MRF18060ALR3 Applications

* with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM 1805 - 1880 MHz.
* Typical GSM Performance, Full Frequency Band (1805 - 1880 MHz) Power Gai

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Power Field Effect Transistors Freescale Semiconductor
Freescale Semiconductor MRF18060ALR3-like datasheet