MRF18060ALR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF18060ALR3, RF Power Field Effect Transistors

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18060A Rev.

9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz.

Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

Specified for GSM 1805 - 1880 MHz.

Typical GSM Performance, Full Frequ

MRF18060ALR3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Available with Low Gold Plating Thickness on Leads