MRF18090AR3 Datasheet - Freescale Semiconductor

MRF18090AR3 RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio www.datasheet4u.com applications. GSM and GSM EDGE Performances, Full Frequency Band Power Gain .

MRF18090AR3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signa

MRF18090AR3_FreescaleSemiconductor.pdf