MRF18090AR3 RF Power Field Effect Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF18090A Rev.7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode La.

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Datasheet Specifications

Part number: MRF18090AR3
Manufacturer: Freescale Semiconductor
File Size: 420.30 KB
Datasheet: MRF18090AR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa

Applications

* with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio www. datasheet4u. com applications.
* GSM and GSM EDGE Performances, Full Frequency Band Power Gain
* 13.5 dB (Typ) @ 90

MRF18090AR3 Distributors

📁 Related Datasheet

MRF18090A MRF18090AS MRF18090B MRF18090BS MRF18030ALR3 MRF18030ALSR3

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MRF18090AR3 Power Field Effect Transistor Freescale Semiconductor

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