MRF18090AR3 Datasheet - Freescale Semiconductor

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MRF18090AR3 RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF18090A Rev.7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode La.

MRF18090AR3_FreescaleSemiconductor.pdf

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Datasheet Details

Part number:

MRF18090AR3

Manufacturer:

Freescale Semiconductor

File Size:

420.30 KB

Description:

RF Power Field Effect Transistor

Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa

Applications

* with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio www. datasheet4u. com applications.
* GSM and GSM EDGE Performances, Full Frequency Band Power Gain
* 13.5 dB (Typ) @ 90

MRF18090AR3 Distributors

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MRF18090AR3 Power Field Effect Transistor Freescale Semiconductor

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