MRF18030BLR3 Features
* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Low Gold Plating Thickness on Leads, 40μ″ Nominal.
MRF18030BLR3_FreescaleSemiconductor.pdf
Datasheet Details
MRF18030BLR3
Freescale Semiconductor
373.24 KB
Rf power field effect transistors n-channel enhancement-mode lateral mosfets.
MRF18030BLR3 Distributor
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