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MRF18030BLR3 Datasheet - Freescale Semiconductor

MRF18030BLR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz. Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts Cap.

MRF18030BLR3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Low Gold Plating Thickness on Leads, 40μ″ Nominal.

MRF18030BLR3 Datasheet (373.24 KB)

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Datasheet Details

Part number:

MRF18030BLR3

Manufacturer:

Freescale Semiconductor

File Size:

373.24 KB

Description:

Rf power field effect transistors n-channel enhancement-mode lateral mosfets.

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MRF18030BLR3 Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor

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