* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Low Gold Plating Thickness on Leads, 40μ″ Nominal.
MRF18030BLR3 Datasheet (373.24 KB)
MRF18030BLR3
Freescale Semiconductor
373.24 KB
Rf power field effect transistors n-channel enhancement-mode lateral mosfets.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel.
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