MRF18030BLR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor

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Part number:

MRF18030BLR3

Manufacturer:

Freescale Semiconductor

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373.24 KB

Description:

Rf power field effect transistors n-channel enhancement-mode lateral mosfets.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/20.
06 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for G.

✔ MRF18030BLR3 Features

Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness

✔ MRF18030BLR3 Application

with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

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MRF18030BLR3 Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor

Datasheet Details

File Size:

Description:

✔ MRF18030BLR3 Features

✔ MRF18030BLR3 Application

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