MRF18090BR3 LATERAL N-CHANNEL RF POWER MOSFETs

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF18090B Rev.7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode L.

📥 Download Datasheet

MRF18090BR3 Datasheet Preview — Preview of MRF18090BR3 PDF

Datasheet Specifications

Part number: MRF18090BR3
Manufacturer: Freescale Semiconductor
File Size: 413.93 KB
Datasheet: MRF18090BR3_FreescaleSemiconductor.pdf
Description: LATERAL N-CHANNEL RF POWER MOSFETs

Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection www. DataSheet4U. com
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equi

Applications

* with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications.
* GSM and EDGE Performances, Full Frequency Band Power Gain
* 13.5 dB (Typ) @ 90 Watts (CW) Efficiency

MRF18090BR3 Distributors

📁 Related Datasheet

MRF18090B MRF18090BS MRF18090A MRF18090AS MRF18030ALR3 MRF18030ALSR3

📌 All Tags

MRF18090BR3 LATERAL N-CHANNEL POWER MOSFETs Freescale Semiconductor

Freescale Semiconductor MRF18090BR3-like datasheet