Description
Freescale Semiconductor Technical Data Document Number: MRF18090B Rev.7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode L.
Features
* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection www. DataSheet4U. com
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equi
Applications
* with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications.
* GSM and EDGE Performances, Full Frequency Band Power Gain
* 13.5 dB (Typ) @ 90 Watts (CW) Efficiency