MRF18090BSR3 Datasheet - Freescale Semiconductor

MRF18090BSR3 LATERAL N-CHANNEL RF POWER MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. GSM and EDGE Performances, Full Frequency Band Power Gain 13.5 dB (Typ) @ 90 Watts (CW).

MRF18090BSR3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection www.DataSheet4U.com

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equi

MRF18090BSR3 Datasheet (413.93 KB)