Datasheet Details
Part number:
MRF18030BSR3, MRF18030BR3
Manufacturer:
Motorola
File Size:
296.50 KB
Description:
The rf mosfet line rf power field effect transistor.
Note:
This datasheet PDF includes multiple part numbers: MRF18030BSR3, MRF18030BR3.
Please refer to the document for exact specifications by model.
MRF18030BSR3, MRF18030BR3, THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR
MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
Specified for GSM 1930 1990 MHz.
Typical GSM Performance: Power Gain 14 dB (Typ) @ 30 Watts Efficienc
MRF18030BSR3 Features
* here personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, dam
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