MRF18030BLSR3, MRF18030BLR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor

MRF18030BLSR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18030B Rev.7, 5/2006 RF Power Field Effect Transistors N - Channel.

MRF18030BLSR3 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Low Gold Plating Thickness on Leads, 40μ″ Nominal.

MRF18030BLSR3 Applications

* with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.
* Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts
* Capable of Handling 5:1 VSWR, @ 26 Vdc, 3

📥 Download Datasheet

MRF18030BLSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF18030BLSR3, MRF18030BLR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF18030BLSR3, MRF18030BLR3
Manufacturer: Freescale Semiconductor
File Size: 373.24 KB
Datasheet: MRF18030BLR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Note: This datasheet PDF includes multiple part numbers: MRF18030BLSR3, MRF18030BLR3.
Please refer to the document for exact specifications by model.

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