Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE .
Features
* F
RF Device Data Freescale Semiconductor
MRF18085AR3 MRF18085ALSR3 5-7
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Applications
* with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/ cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805 - 1880 MHz.
* GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 M