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MRF18085ALSR3, MRF18085AR3 - RF Power Field Effect Transistors

MRF18085ALSR3 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE .

MRF18085ALSR3 Features

* F RF Device Data Freescale Semiconductor MRF18085AR3 MRF18085ALSR3 5-7 How to Reach Us: Home Page: www. freescale. com E - mail: support@freescale. com USA/Europe or Locations Not Listed: Freescale Semiconductor

MRF18085ALSR3 Applications

* with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/ cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805 - 1880 MHz.
* GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 M

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF18085ALSR3, MRF18085AR3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF18085ALSR3, MRF18085AR3
Manufacturer
Freescale Semiconductor
File Size
374.15 KB
Datasheet
MRF18085AR3-FreescaleSemiconductor.pdf
Description
RF Power Field Effect Transistors
Note
This datasheet PDF includes multiple part numbers: MRF18085ALSR3, MRF18085AR3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor
Freescale Semiconductor MRF18085ALSR3-like datasheet