Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/ cellular radio and WLL applications.
Specified for GSM - GSM EDGE 1805 - 1880 MHz.
GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain - 15 dB (
MRF18085ALSR3 Features
* F RF Device Data Freescale Semiconductor MRF18085AR3 MRF18085ALSR3 5-7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor
MRF18085AR3-FreescaleSemiconductor.pdf
Datasheet Details
MRF18085ALSR3, MRF18085AR3
Freescale Semiconductor
374.15 KB
Rf power field effect transistors.
This datasheet PDF includes multiple part numbers: MRF18085ALSR3, MRF18085AR3.
Please refer to the document for exact specifications by model.
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