MRF18085AR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE .

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Datasheet Specifications

Part number: MRF18085AR3
Manufacturer: Freescale Semiconductor
File Size: 374.15 KB
Datasheet: MRF18085AR3-FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* F RF Device Data Freescale Semiconductor MRF18085AR3 MRF18085ALSR3 5-7 How to Reach Us: Home Page: www. freescale. com E - mail: support@freescale. com USA/Europe or Locations Not Listed: Freescale Semiconductor

Applications

* with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/ cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805 - 1880 MHz.
* GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 M

MRF18085AR3 Distributors

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MRF18085AR3 Power Field Effect Transistors Freescale Semiconductor

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