MRF18090BS Datasheet (Motorola) - LATERAL N-CHANNEL RF POWER MOSFETs

MRF18090BS, LATERAL N-CHANNEL RF POWER MOSFETs

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090B/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz.

Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

To be used in class AB for GSM and EDGE cellular radio applications.

GSM and EDGE Performances, Full Frequency Band Power Gain 13.5

MRF18090BS Features

* lication or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary i