MRF8P9040NR1 Datasheet - NXP

MRF8P9040NR1, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for CDM.

datasheet Preview Page 1 from Datasheet4u.com

MRF8P9040NR1-NXP.pdf

MRF8P9040NR1 Datasheet Preview — Preview of MRF8P9040NR1 PDF

Datasheet Details

Part number:

MRF8P9040NR1

Manufacturer:

NXP ↗

File Size:

897.73 KB

Description:

RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation

Applications

* with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Driver Application
* 900 MHz
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg. , IQ Magni

MRF8P9040NR1 Distributors

📁 Related Datasheet

MRF8P9300HR6 MRF8P9300HSR6 MRF8P20160HR3 MRF8P20160HSR3 MRF8P23080HR3 MRF8P23080HSR3

📌 All Tags

MRF8P9040NR1 Power Field Effect Transistors NXP

NXP MRF8P9040NR1-like datasheet