MRF8P9040NR1 RF Power Field Effect Transistors

NXP

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for CDM.

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Datasheet Specifications

Part number: MRF8P9040NR1
Manufacturer: NXP ↗
File Size: 897.73 KB
Datasheet: MRF8P9040NR1-NXP.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation

Applications

* with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Driver Application
* 900 MHz
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg. , IQ Magni

MRF8P9040NR1 Distributors

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MRF8P9040NR1 Power Field Effect Transistors NXP

NXP MRF8P9040NR1-like datasheet