MRF8P20160HSR3 - RF Power Field Effect Transistor

Freescale Semiconductor

MRF8P20160HSR3 Datasheet Preview — Preview of MRF8P20160HSR3 PDF

Datasheet Details

Part number	MRF8P20160HSR3
Manufacturer	Freescale Semiconductor
File Size	301.15 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8P20160HSR3_FreescaleSemiconductor.pdf

MRF8P20160HSR3 Product details

Description

10 pF Chip Capacitors 0.3 pF Chip Capacitor 1.1 pF Chip Capacitors 12 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 22 μF, 35 V Tantalum Capacitors 2.0 pF Chip Capacitors 2.2 pF Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 0.8 pF Chip Capacitor 50 Ω, 4 W Chip Resistor 8.25 Ω, 1/4 W Chip Resistors 1900 MHz Band 90°, 3 dB Chip Hybrid Coupler 0.020″, εr = 3.5 Part Number ATC600F100JT250XT ATC600F0R3BT250XT ATC600F1R1BT250XT ATC600F120JT250XT GRM55DR61H106KA88L T491X226K035AT ATC600F2R0BT25

Features

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.
In T.

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Published: Jun 30, 2010 |