MRF8P20160HSR3 RF Power Field Effect Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF8P20160H www.DataSheet4U.com Rev.0, 4/2010 RF Power Field Effect Transistor N-Channel En.
10 pF Chip Capacitors 0.

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Datasheet Specifications

Part number: MRF8P20160HSR3
Manufacturer: Freescale Semiconductor
File Size: 301.15 KB
Datasheet: MRF8P20160HSR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
* Internally Matched for Ease of Use
* Integrated ESD Prot

Applications

* with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg. , IQ Magnitude Clipping, Channel Bandw

MRF8P20160HSR3 Distributors

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MRF8P20160HSR3 Power Field Effect Transistor Freescale Semiconductor

Freescale Semiconductor MRF8P20160HSR3-like datasheet