Part number: MRF8P20160HSR3
Manufacturer: Freescale Semiconductor
File Size: 301.15KB
Download: 📄 Datasheet
Description: RF Power Field Effect Transistor
* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large-Signal Load-Pul.
with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modula.
10 pF Chip Capacitors 0.3 pF Chip Capacitor 1.1 pF Chip Capacitors 12 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 22 μF, 35 V Tantalum Capacitors 2.0 pF Chip Capacitors 2.2 pF Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 0.8 pF Chip Capaci.
Image gallery
TAGS
📁 Related Datasheet
MRF8P20160HSR3 - RF Power Field Effect Transistors
(Motorola Semiconductor Products)
DataSheet.in
Freescale Semiconductor Technical Data
Document Number: MRF8P2160H Rev. 1, 7/2010
RF Power Field Effect Transistors
N--Channel Enhanc.
MRF8P20160HR3 - RF Power Field Effect Transistors
(Motorola Semiconductor Products)
DataSheet.in
Freescale Semiconductor Technical Data
Document Number: MRF8P2160H Rev. 1, 7/2010
RF Power Field Effect Transistors
N--Channel Enhanc.
MRF8P23080HR3 - RF Power Field Effect Transistors
(Freescale Semiconductor)
Freescale Semiconductor Technical Data
Document Number: MRF8P23080H www..com Rev. 0, 5/2010
RF Power Field Effect Transistors
N--Channel.
MRF8P23080HSR3 - RF Power Field Effect Transistors
(Freescale Semiconductor)
Freescale Semiconductor Technical Data
Document Number: MRF8P23080H www..com Rev. 0, 5/2010
RF Power Field Effect Transistors
N--Channel.
MRF8P23160WHR3 - RF Power Field Effect Transistors
(Freescale Semiconductor)
Freescale Semiconductor Technical Data
Document Number: MRF8P23160WH Rev. 0, 12/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode .
MRF8P23160WHSR3 - RF Power Field Effect Transistors
(Freescale Semiconductor)
Freescale Semiconductor Technical Data
Document Number: MRF8P23160WH Rev. 0, 12/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode .
MRF8P26080HR3 - RF Power Field Effect Transistors
(Freescale Semiconductor)
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE b.
MRF8P26080HSR3 - RF Power Field Effect Transistors
(Freescale Semiconductor)
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE b.
MRF8P9040GNR1 - RF Power Field Effect Transistors
(NXP)
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and.
MRF8P9040NBR1 - RF Power Field Effect Transistors
(NXP)
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and.
