MRF8P23160WHR3 Datasheet PDF - Freescale Semiconductor RF Power Field Effect Transistors Specs

MRF8P23160WHR3 - RF Power Field Effect Transistors

Datasheet Summary

Description

Part Number C1, C4, C5 0.2 pF Chip Capacitors ATC600F0R2BT250XT C2, C3 0.3 pF Chip Capacitors ATC600F0R3BT250XT C6 3.3 pF Chip Capacitor ATC600F3R3BT250XT C7 5.6 pF Chip Capacitor ATC600F5R6BT250XT C8, C9, C12, C13 6.8 pF Chip Capacitors ATC600F6R8BT250XT C10, C11 8.2 pF Chip Capacit

Features

Designed for Wide Instantaneous Bandwidth.

Datasheet Details

Part number	MRF8P23160WHR3
Manufacturer	Freescale Semiconductor
File Size	530.30 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8P23160WHR3 Datasheet
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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz. • CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC1i.ad2rtrhVied=rcW3, .P8--oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el I:PQVADRMDa==g9n2.i9t8uddVBeolt@s, 0.01% Probability on CCDF. Frequency 2300 MHz 2350 MHz 2400 MHz Gps (dB) 13.9 14.1 13.8 ηD Output PAR ACPR (%) (dB) (dBc) 37.1 7.9 --31.0 38.3 7.7 --32.2 38.3 7.4 --33.1 MRF8P23160WHR3 MRF8P23160WHSR3 2300--2400 MHz, 30 W AVG.

Published: Sep 25, 2015 |