MRF8P23160WHR3 Datasheet - Freescale Semiconductor

MRF8P23160WHR3 RF Power Field Effect Transistors

Part Number C1, C4, C5 0.2 pF Chip Capacitors ATC600F0R2BT250XT C2, C3 0.3 pF Chip Capacitors ATC600F0R3BT250XT C6 3.3 pF Chip Capacitor ATC600F3R3BT250XT C7 5.6 pF Chip Capacitor ATC600F5R6BT250XT C8, C9, C12, C13 6.8 pF Chip Capacitors ATC600F6R8BT250XT C10, C11 8.2 pF Chip Capacit.

Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz. CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d wC1i.ad2rtrhVied=rcW3, .P8 oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el I:PQVADRMDa==g9n2.i9t8uddVBeo.

MRF8P23160WHR3 Features

* Designed for Wide Instantaneous Bandwidth Applications

* Designed for Wideband Applications that Require 100 MHz Signal Bandwidth

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characteri

MRF8P23160WHR3 Datasheet (530.30 KB)

MRF8P23160WHR3 Datasheet Preview — Preview of MRF8P23160WHR3 PDF

Datasheet Details

Part number:

MRF8P23160WHR3

Manufacturer:

Freescale Semiconductor

File Size:

530.30 KB

Description:

Rf power field effect transistors.

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