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MRF8P26080HSR3 - RF Power Field Effect Transistors

Download the MRF8P26080HSR3 datasheet PDF. This datasheet also covers the MRF8P26080HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Part Number C1, C2, C3, C4, C5, C6, C7, C8 22 pF Chip Capacitors ATC600F220JT250XT C9, C10 3.3 μF, 50 V Chip Capacitors GRM32DR71H335KA88B C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L C13, C14 4.7 μF, 50 V Chip Capacitors GRM31CR71H475KA12L C15, C16 0.6 pF Chip Capacitors A

Key Features

  • Production Tested in a Symmetrical Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF8P26080HR3-FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF8P20160HR3 RF Power Field Effect Transistors Motorola Semiconductor Products
MRF8P20160HSR3 RF Power Field Effect Transistors Motorola Semiconductor Products
MRF8P9040GNR1 RF Power Field Effect Transistors NXP
MRF8P9040NBR1 RF Power Field Effect Transistors NXP
MRF8P9040NR1 RF Power Field Effect Transistors NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8P26080HR3 RF Power Field Effect Transistors
MRF8P20160HSR3 RF Power Field Effect Transistor
MRF8P23080HR3 RF Power Field Effect Transistors
MRF8P23080HSR3 RF Power Field Effect Transistors
MRF8P23160WHR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2570 MHz 2595 MHz 2620 MHz Gps (dB) 15.4 15.2 15.0 ηD Output PAR ACPR (%) (dB) (dBc) 39.1 6.8 --33.6 38.2 6.8 --36.0 36.9 6.8 --40.