MRF8P26080HSR3
MRF8P26080HSR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
- Part of the MRF8P26080HR3 comparator family.
- Part of the MRF8P26080HR3 comparator family.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
- Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 2570 MHz 2595 MHz 2620 MHz
Gps (dB) 15.4 15.2 15.0
ηD Output PAR ACPR
(%)
(dB)
(dBc)
39.1 6.8 --33.6
38.2 6.8 --36.0
36.9...
